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Structural and electrochemical properties of the doped spinels Li_1.05M_0.02Mn_1.98O_3.98N_0.02 (M ₌ Ga³⁺, Al³⁺, or Co³⁺; N = S^2- or F^-) for use as cathode material in lithium batteriesAMARAL, Fábio A; BOCCHI, Nerilso; BROCENSCHI, Ricardo F et al.Journal of power sources (Print). 2010, Vol 195, Num 10, pp 3293-3299, issn 0378-7753, 7 p.Article

Effect of Ga incorporation in sequentially prepared CuInS₂ thin film absorbersNEISSER, A; HENGEL, I; KLENK, R et al.Solar energy materials and solar cells. 2001, Vol 67, Num 1-4, pp 97-104, issn 0927-0248Conference Paper

Comparison of boron- and gallium-doped p- type Czochralski silicon for photovoltaic applicationGLUNZ, S. W; REIN, S; KNOBLOCH, J et al.Progress in photovoltaics. 1999, Vol 7, Num 6, pp 463-469, issn 1062-7995Article

Synthesis and characterization of alkali-free, Ga-substituted MCM-41 and its performance for n-hexane conversionTAKEGUCHI, T; KIM, J.-B; MISOOK KANG et al.Journal of catalysis (Print). 1998, Vol 175, Num 1, pp 1-6, issn 0021-9517Article

Influence of gallium on the growth and photoelectrochemical performances of AgIn₅S₈ photoelectrodesCHENG, Kong-Wei; JHUANG, Chao-Huei; YEH, Lin-Ya et al.Thin solid films. 2012, Vol 524, pp 238-244, issn 0040-6090, 7 p.Article

Band-gap grading in Cu(In, Ga)Se₂ solar cellsGLOECKLER, M; SITES, J. R.The Journal of physics and chemistry of solids. 2005, Vol 66, Num 11, pp 1891-1894, issn 0022-3697, 4 p.Conference Paper

Effect of Ga content on stress corrosion cracking characteristics of Al-9 mass%Mg alloysMAE, T; IHARA, M; KOMURA, K et al.Nippon Kinzoku Gakkaishi (1952). 1996, Vol 60, Num 3, pp 282-289, issn 0021-4876Article